產(chǎn)品概述/Product Introduction：
本設(shè)備主要用于氧化鎵（Ga2O3）單晶生長(zhǎng)（無(wú)銥法），將原料放在垂直的坩堝內(nèi)， 然后從坩堝頂部開始通過(guò)預(yù)設(shè)好的溫度梯度區(qū)作定向凝固。通過(guò)緩慢降溫而生長(zhǎng)出單晶。
This equipment is mainly used for single crystal growth of Gallium Oxide (Ga2O3) (non-iridium method), where the raw material is placed in a vertical crucible and then directionally solidified from the tip of the crucible through a pre-set temperature gradient zone. Single crystals are grown by slow cooling.
提供2英寸驗(yàn)證工藝
Provide 2 inches validation process.
產(chǎn)品特點(diǎn)/Product Characteristics：
?產(chǎn)量: 2-6英寸 Capacity:2-6 inches
?極限溫度: 1850℃ Maximum temperature: 1850°C
?加熱方式: 電阻/RF Heating method: Resistance heating/RF heating
?自動(dòng)化: 全自動(dòng)化（除裝取料外） Automation:Full automation (except loading and unloading)
?氣路: 3 路 Air Circuit: 3 ways
?襯底: 2英寸 Substrate: 2 inches
?單晶: 2英寸 高度: 30mm Single crystal: 2 inches Height: 30mm
?純單晶，沒(méi)有雜質(zhì)，電學(xué)性能不做保證 Pure single crystal, no impurities, electrical properties are not guaranteed